MOSFET 2P-CH 20V 2.3A 6-WDFN NTLJD3115PT1G
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Description:
MOSFET 2P-CH 20V 2.3A 6-WDFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
NTLJD3115PT1G(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32095,Price reference "real-time change" China/Hongkong。 NTLJD3115PT1G package/specs, Download NTLJD3115PT1G、Datasheet。